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GaN窒化ガリウム

發言人:HUNTER, on Dec/04/2017    00:59:00 (IP code: X.X.231.159)


窒化ガリウム(ちっかガリウム、GaN)はガリウムの窒化物であり、主に青色発光ダイオード(青色LED)の材料として用いられる半導体である。ガリウムナイトライド (gallium nitride) とも呼ばれる

Record ID: 1512320340   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    00:59:57 (IP code: X.X.231.159)
PANASONIC TO START MASS PRODUCTION OF GAN POWER TRANSISTOR & DRIVERS
Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers.
GaN is one of the next generation semiconductor compounds that can achieve space and energy savings when applied to transistors used in various power units. A gate driver is required to drive a transistor; however, general gate drivers for conventional silicon (Si) transistors cannot exploit the potential of GaN transistors since the gate structure of GaN transistors is different from that of Si transistors.

The new high-speed gate driver (AN34092B) helps our X-GaN easily and safely achieves high-speed switching performance. It can drive transistors at high frequencies of up to 4 MHz and integrates the active miller clamp function that prevents malfunction during high-speed switching. X-GaN achieves a 600 V breakdown enhancement mode through our unique technology and features high-speed switching and low on-resistance. The combination of X-GaN and dedicated high-speed gate drivers will contribute to significant space and energy savings of various power conversion units for industrial and consumer use.

X-GaN and dedicated high-speed gate drivers are suitable for various applications such as 100 W to 5 kW power supply units, inverters, data centers, mobile base stations, consumer electronics, audio-visual equipment, industrial and medical devices.

Record ID: 1512320340R001   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    01:02:03 (IP code: X.X.231.159)
Fujitsu Wins Grand Prize in 26th Global Environment Awardhttp://powerlinks.news/article/2dfffd/fujitsu-wins-grand-prize-in-26th-global-environment-award
Fujitsu Limited and Fujitsu Laboratories Ltd. today announced that Fujitsu has been awarded the grand prize of the 26th annual Global Environment Award sponsored by the Fujisankei Communications Group. Fujitsu received this honor for Fujitsu Laboratories' development of a miniature, highly efficient AC adapter that uses gallium nitride (GaN)(1) high electron mobility transistors (HEMT)(2) (GaN-HEMT).

The Fujitsu Group, which aims to contribute to society through its business, strives to develop highly energy-efficient products, and has been working to improve the energy efficiency of the power devices used in information and communication equipment. As part of this effort, Fujitsu Laboratories developed the world’s smallest and most efficient AC adapter using GaN-HEMT in 2015. This AC adapter can reduce power dissipation by more than 50% when charging mobile devices, and can charge them in one-third the time previously required. Going forward, Fujitsu will apply this AC adapter technology widely, contributing to a reduced environmental burden.

The Global Environment Award, sponsored by the Fujisankei Communications Group, recognizes companies and organizations that undertake initiatives to preserve the environment or prevent global warming, with the goal of promoting harmony with industrial development and the global environment.

In 2015, Fujitsu Laboratories led the world in developing the world’s smallest and most efficient AC adapter using low dynamic resistance GaN-HEMT as the switching element. In order to suppress the current loss that normally accompanies high-speed operation, Fujitsu Laboratories implemented a circuit, a new technology at the time of development, which accurately controls the timing for switching when converting from alternating current to direct current. By utilizing the low dynamic resistance of GaN-HEMT, Fujitsu Laboratories developed a smaller and more efficient adapter. This technology was able to reduce power dissipation when charging mobile devices by more than 50%, while enabling rapid charging in one-third the time previously required.

"Fujitsu Develops World's Smallest, Most Efficient 12-W AC Adapter," press release, December 9, 2015


Record ID: 1512320340R002   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    01:04:18 (IP code: X.X.231.159)
GaN を他の半導体と比較して、
熱伝導率が大きく放熱性に優れている
高温での動作が可能
電子の飽和速度が大きい
絶縁破壊電圧が高い
電子デバイスへの応用は、AlGaN/GaNのヘテロ構造を利用した高周波デバイスが先行している。これは、GaNの持つピエゾ効果によりヘテロ界面に発生する高密度の2次元電子ガスを利用できるためである。 また、高い絶縁破壊耐圧を持つことから損失の低いパワーデバイスを実現できると考えられる。

Record ID: 1512320340R003   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    01:06:44 (IP code: X.X.231.159)
1980年代前半はセレン化亜鉛 (ZnSe) と GaN が青色系発光ダイオードの材料の候補であった。しかし格子定数と熱膨張係数が GaN に近い基板が存在せず、良質な結晶を作製できなかったため、ほとんどの研究者、研究機関は ZnSe を用いて青緑色発光ダイオード作製を目指していた。世界の研究者からはZnSeを用いた青緑色半導体レーザも報告されたが、寿命が短く製品化には至らなかった。
1989年、赤崎勇と天野浩は電子線照射で、長年作れなかったP型窒化ガリウムを発明。その後、pn接合の青色発光ダイオードを実現したが、窒化ガリウムが光るのは紫外発光で、青には光らなく暗い。これは、ホモジャンクソンと言いLEDには使わない。そして、電子線照射は実験的にはいいが量産化には向かない。
1992年、中村修二は電子線照射よりも、もっと簡単に熱処理でP型窒化ガリウムを作ることを発見。そして、20年もの間、なぜP型にならなかったのか理論を解明。
高輝度青色LEDは光る材料によって決まり、その材料は窒化インジウムガリウム。中村修二は1年半、改良を重ねて作った独自の2フローMOCVDで、室温でもよく光る窒化インジウムガリウムを1992年に発明した。
1993年、世界に先駆け発明、実用化した高輝度青色発光ダイオードは、窒化インジウムガリウムを発光層にしたダブルヘテロ構造で、従来の100倍も明るく、この高輝度青色LEDがノーベル賞受賞対象である。

Record ID: 1512320340R004   From: 台灣

回信 發言人:摸咪郎, on Dec/04/2017    01:09:22 (IP code: X.X.17.134)
倥 あむえ! 台湾とは関係がない!




摸咪郎

Record ID: 1512320340R005   From: 美國

回信 發言人:HUNTER, on Dec/04/2017    01:23:24 (IP code: X.X.231.159)
湾とは関係がない! =摸咪

哈哈 BRA関係がない??

Record ID: 1512320340R006   From: 台灣

回信 發言人:HUNTER, on Dec/04/2017    01:31:11 (IP code: X.X.231.159)
The Truth About Norwegian Farm-Raised Salmon
Separate facts from fiction about farm-raised salmon and see how the Norwegian aquaculture industry sets the standard for high-quality, safe and sustainably farmed salmon.https://fromnorway.com/en-US%2Forigin%2FNorway-the-worlds-leader-in-aquaculture%2Fthe-truth-about-norwegian-farm-raised-salmon%2F


Record ID: 1512320340R007   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    01:36:12 (IP code: X.X.231.159)
鳥取 境港 養殖鮭http://www.yumisui.jp/jigyo/e370/salmon/






Record ID: 1512320340R008   From: 台灣

回信 發言人:HUNTER轉, on Dec/04/2017    01:41:21 (IP code: X.X.231.159)




Record ID: 1512320340R009   From: 台灣

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